| Original Articles |
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Highly Conductive Nb-Doped BaTiO3 Epitaxial Thin Films Grown by Laser Molecular Beam Epitaxy |
| YAN Lei;LÜ Hui-Bin;CHEN Zheng-Hao;DAI Shou-Yu;TAN Guo-Tai;YANG Guo-Zhen |
| Laboratory of Optical Physics, Institute of Physics and
Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
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| Cite this article: |
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YAN Lei, LÜ, Hui-Bin et al 2001 Chin. Phys. Lett. 18 1513-1515 |
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Abstract The n-type conductive BaNb0.3Ti0.7O3 thin films were grown on SrTiO3(001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 films with (001) orientation are epitaxially grown on SrTiO3 substrates, as confirmed by x-ray diffraction techniques. The root-mean-square surface roughness of the deposited thin films is measured to be 0.24nm by atomic force microscopy. The resistivity, carrier concentration and mobility of the BaNb0.3Ti0.7O3 thin film are 5.9 x 10-4Ω.cm, 1.8 x 1021cm-3 and 10.7cm2.V-1.s-1 at room temperature, respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge.
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| Keywords:
72.80.Ga
73.61.Le
74.62.Dh
81.15.Fg
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Published: 01 November 2001
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| PACS: |
72.80.Ga
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(Transition-metal compounds)
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73.61.Le
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(Other inorganic semiconductors)
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74.62.Dh
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(Effects of crystal defects, doping and substitution)
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81.15.Fg
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(Pulsed laser ablation deposition)
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