Impurity-Free Vacancy Diffusion Technique for InGaAsP/InP Multiple Quantum Well Laser Structure

Chin. Phys. Lett.

2001, Vol. 18

Issue (1): 100-102 DOI:

Original Articles

Impurity-Free Vacancy Diffusion Technique for InGaAsP/InP Multiple Quantum Well Laser Structure

HAN De-Jun¹;NIU Jia-Sheng¹;ZHU Hong-Liang²;ZHU Hong-Qing¹;ZHUANG Wan-Ru²

¹Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875 and Beijing Radiation Center, Beijing 100875 ²Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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HAN De-Jun, NIU Jia-Sheng, ZHU Hong-Liang et al 2001 Chin. Phys. Lett. 18 100-102

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Abstract Bandgap tuning of the InGaAsP/InP multiple quantum well (MQW) laser structure by the impurity-free vacancy diffusion (IFVD) is investigated using photoluminescence. It has been demonstrated that the effects of the plasma bombardment to the sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has been discussed.

Keywords: 73.61.Ey 81.05.Ea

Published: 01 January 2001

PACS:	73.61.Ey	(III-V semiconductors)
	81.05.Ea	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I1/0100

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