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Raman Scattering Study of PbSe Grown on (111) BaF2 Substrate |
| YANG Ai-Ling1;WU Hui-Zhen2;LI Zhi-Feng3;QIU Dong-Jiang2;CHANG Yong3;LI Jian-Feng1;P. J. McCann4;X. M. Fang4 |
| 1Department of Information Science and Electronic Engineering, 2Department of Physics, Zhejiang University, Hangzhou 310028,
3Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,
4The University of Oklahoma, Norman, Oklahoma, 7301 9-23, USA
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| Cite this article: |
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YANG Ai-Ling, WU Hui-Zhen, LI Zhi-Feng et al 2000 Chin. Phys. Lett. 17 606-608 |
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Abstract PbSe films were grown on (111)-oriented BaF2 substrates by using molecular beam epitaxy. High resolution x-ray diffraction characterization showed good crystalline quality of PbSe films. Both longitudinal optical phonon at 135cm-1 and transverse optical phonon at 47.6cm-1 were observed by Raman scattering measurements. The Raman tensor calculation demonstrates that both transverse-optical and longitudinal-optical (LO) phonons in PbSe crystal are Raman active on (111)-oriented surface. Furthermore, 2LO phonon a t about 270cm-1 and polaron at about 800cm-1 in PbSe, were also observed. The observed Raman frequencies are in good agreement with theoretical calculations using point ion model.
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| Keywords:
78.30.Gt
73.60.Fw
63.20.-e
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Published: 01 August 2000
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