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Pb Surfactant-Assisted Co Film Growth on Cu (111) |
| XU Ming-Chun1 QIAN Hai-Jie2;LIU Feng-Qin2;KRASH Ibrahim2;LAI Wu-Yan1;WU Si-Cheng3 |
| 1State Key Laboratory of Magnetism, Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Science, Beijing 100039
3Department of Physics, Peking University, Beijing 100871
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| Cite this article: |
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XU Ming-Chun QIAN Hai-Jie, LIU Feng-Qin, KRASH Ibrahim et al 2000 Chin. Phys. Lett. 17 595-597 |
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Abstract Surfactant-assisted Co film epitaxy growth on Cu (111) using Pb as a surfactant was studied by means of Auger electron spectra and synchrotron radiation photoemission spectra. The results reveal that with increasing the Co thickness most of the Pb atoms float on the surface. Compared with 0.7ML(monolayer) Pb, the Co film with 1.5ML Pb surfactant has more layer-by-layer growth on Cu (111). The predeposited Pb layer can suppress the intralayer diffusion on the Cu (111) surface and effectively increase the Co island density at the initial stage of Co growth. On the contrary, a Pb-Co surface alloy was found during the Co film growth; this may hinder the interlayer diffusion of the deposited Co atoms, which is unfavorable to the layer-by-layer growth. The Pb-Co is also considered to be the main reason why some Pb atoms have been buried in the Co films.
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| Keywords:
68.55.-a
81.15.Aa
79.60.Dp
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Published: 01 August 2000
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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81.15.Aa
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(Theory and models of film growth)
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79.60.Dp
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(Adsorbed layers and thin films)
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