| Original Articles |
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Preparation and Characterization of InAs/Si Composite Film |
| YANG Lin;LI Guang-Hai;ZHENG Mao-Jun;ZHANG Li-De |
| Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 |
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| Cite this article: |
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YANG Lin, LI Guang-Hai, ZHENG Mao-Jun et al 2000 Chin. Phys. Lett. 17 592-594 |
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Abstract Composite thin films consisting of nanosized InAs particles embedded in amorphous Si matrices were prepared by radio frequency co-sputtering of InAs and Si. X-ray diffraction spectra show that the particle size of InAs increases with the increasing annealing temperature, while the particle sizes of In and As reach their maximum values at the temperature of 200oC, and decrease with the further increase of the annealing temperature. In and As can not exist in the 500oC sample due to the sublimation of In and As the reaction In + As →InAS. The composition of the film in different levels was analyzed. We found that only in the deep level, the mole contents of As and In conform to the stoichiometric ratio and the oxidation occurs only a few nanometers from the surface. We believe that the scarcity of In and As near the surface is due to the sublimation of In and the oxide of As.
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| Keywords:
68.55.-a
68.55.Nq
73.61.Jc
73.61.Ey
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Published: 01 August 2000
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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68.55.Nq
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(Composition and phase identification)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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73.61.Ey
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(III-V semiconductors)
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