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A White Emitting Organic Diode with a Doped Blocking Layer |
| ZHANG Zhi-Lin;JIANG Xue-Yin;XU Shao-Hong |
| Department of Materials Science, Shanghai University, Shanghai 201800 |
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| Cite this article: |
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ZHANG Zhi-Lin, JIANG Xue-Yin, XU Shao-Hong 2000 Chin. Phys. Lett. 17 534-536 |
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Abstract A novel white emitting organic diode has been simply realized by inserting a doped hole-blocking layer between the hole transporting layer (HTL) and the electron transporting layer (ETL). The structure of this device is ITO/CuPc/NPB/blocking layer : rubrene/Alq/MgAg. Copper phthalocyanine(CuPc) was used as a buffer layer, N,N’-bis-(I-naphthy1)-N,N’-diphenyl-1,1’-bipheny1-4,4’-diamine (NPB) as the HTL, and trimer of N-arylbenzimidazoles (TPBi) as the blocking layers, in which rubrene is doped. Tris(8-quinolino1ato)aluminum complex(A1q) as ETL. Indium tin oxide and MgAg were the anode and cathode, respectively. The emission spectrum of this device covers a wide range of visible region and can be sensitively adjusted by the concentration of rubrene. The white emission with the CIE (Commission International de 1’ Eclairage) color coordinates x = 0.31, y = 0.32, a maximum luminance of 8635cd/m2, and the luminous efficiency 1.391m/W at the luminance of 100cd/m2 were obtained in the device with 1.5% rubrene concentration in TPBi.
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| Keywords:
78.60.Fi
73.61.Ph
72.40.Jk
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Published: 01 July 2000
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