Nonlinear Electrical Behaviour of the TiO2.Sb2O3 System

Chin. Phys. Lett.

2000, Vol. 17

Issue (7): 530-531 DOI:

Original Articles

Nonlinear Electrical Behaviour of the TiO₂.Sb₂O₃ System

WANG Jin-Feng;CHEN Hong-Cun;ZHANG Xing-Hua;ZHANG De-Jun;ZHONG Wei-Lie

Department of Physics, Shandong University, Jinan 250100

Cite this article:

WANG Jin-Feng, CHEN Hong-Cun, ZHANG Xing-Hua et al 2000 Chin. Phys. Lett. 17 530-531

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Abstract The Sb₂O₃-doped TiO₂ varistors were obtained by conventional ceramic processing. The 0.75 mol%Sb₂O₃.99.25mol%TiO₂ varistor has a nonlinear coefficient α = 7 and a minimum breakdown electrical field of 6V/mm. The nonlinear electrical behaviour of TiO₂.Sb₂O₃ ceramics was explained by the introduction of defects in the crystal lattice that are responsible for the formation of Schottky potential barriers at grain boundaries.

Keywords: 73.40.Lq

Published: 01 July 2000

PACS:

73.40.Lq

(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I7/0530

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	WANG Jin-Feng
	CHEN Hong-Cun
	ZHANG Xing-Hua
	ZHANG De-Jun
	ZHONG Wei-Lie

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