Adsorption and Thermal Decomposition of SiH4<suB>4</suB> on Cu(111) by Multiple-Scattering Cluster Method

Chin. Phys. Lett.

2000, Vol. 17

Issue (7): 525-527 DOI:

Original Articles

Adsorption and Thermal Decomposition of SiH4₄ on Cu(111) by Multiple-Scattering Cluster Method

HE Jiang-Ping;TANG Jing-Chang

Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027

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HE Jiang-Ping, TANG Jing-Chang 2000 Chin. Phys. Lett. 17 525-527

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Abstract Adsorption and thermal decomposition of SiH₄ on Cu(111) at 110 K has been studied by the calculation of silicon K-edge near edge x-ray absorption fine structure spectra using multiple-scattering cluster method. It is found that the cleavage of Si-H bond yields SiH₃ species adsorbed on the fcc 3-fold hollow sites on Cu (111) surface at 110K .

Keywords: 68.35.Bs 61.10.Ht

Published: 01 July 2000

PACS:	68.35.Bs
	61.10.Ht

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I7/0525

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