| Original Articles |
|
|
|
|
Enhanced Transverse Magnetoresistive Effect in Semiconducting Diamond Films |
| WANG Wan-Lu;LIAO Ke-Jun;WANG Bi-Ben |
| Department of Applied Physics, Chongqing University, Chongqing 400044 |
|
| Cite this article: |
|
WANG Wan-Lu, LIAO Ke-Jun, WANG Bi-Ben 2000 Chin. Phys. Lett. 17 370-372 |
|
|
|
Abstract A very large magnetoresistive effect in both homoepitaxial and heteroepitaxial semiconducting diamond films by chemical vapor deposition has been observed. The changes in the resistance of the films strongly depend on both magnetic field intensity and geometric form of the samples. The effect of disk structure is greater than that of stripe type samples, also variation in the resistance of homoepitaxial diamond films is greater than that of heteroepitaxial diamond films. The resistance of homoepitaxial diamond films with the disk structure is increased by a factor of 2.1 at room temperature under magnetic field intensity of 5 T, but only 0.80 for heteroepitaxial diamond films.
|
| Keywords:
75.70.Ak
77.55.+f
81.15.Gh
|
|
|
Published: 01 May 2000
|
|
| PACS: |
75.70.Ak
|
(Magnetic properties of monolayers and thin films)
|
| |
77.55.+f
|
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
