Chin. Phys. Lett.  2000, Vol. 17 Issue (5): 358-359    DOI:
Original Articles |
Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells
LIU Jian-Jun1,2;ZHANG Shu-Fang1;KONG Xiao-Jun1,2;LI Shu-Shen2
1Department of Physics, Hebei Normal University, Shijiazhuang 050016 2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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LIU Jian-Jun, ZHANG Shu-Fang, KONG Xiao-Jun et al  2000 Chin. Phys. Lett. 17 358-359
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Abstract The binding energy of an exciton bound to an ionized donor impurity (D+, X ) located at the center or the edge in GaAs-AIxGal-xAs quantum wells is calculated variationally for the well width from 10 to 300Å by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.

Keywords: 71.35.-y      73.20.Dx     
Published: 01 May 2000
PACS:  71.35.-y (Excitons and related phenomena)  
  73.20.Dx  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2000/V17/I5/0358
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