| Original Articles |
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Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition |
| CHEN Peng;SHEN Bo;ZHU Jian-Min;CHEN Zhi-Zhong;ZHOU Yu-Gang;XIE Shi-Yong;ZHANG Rong;HAN Ping;GU Shu-Lin;ZHENG You-Dou;JIANG Shu-Sheng;FENG Duan Z. C. Huang* |
| Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093
*Raytheon ITSS, 4500 Forbes Bulivard, MD20771, USA |
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| Cite this article: |
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CHEN Peng, SHEN Bo, ZHU Jian-Min et al 2000 Chin. Phys. Lett. 17 224-226 |
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Abstract Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those domains locate near the bunched steps, and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3nm thick, can also be observed between the GaN buffer layer and the Si substrate.
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| Keywords:
68.55.Jk
81.15.Gh
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Published: 01 March 2000
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| PACS: |
68.55.Jk
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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