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Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(111) Substrate by Ion Beam Assisted Deposition |
| MU Hai-Chuan1;REN Cong-Xin1;JIANG Bing-Yao1;DING Xing-Zhao1;YU Yue-Hui1;WANG Xi1;LIU Xiang-Huai1;ZHOU Gui-En2;JIA Yun-Bo2
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| 1Ion Beam Laboratory, Shanghai Insitute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
2Structure Research Laboratory, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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MU Hai-Chuan, REN Cong-Xin, JIANG Bing-Yao et al 2000 Chin. Phys. Lett. 17 221-223 |
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Abstract The (001) oriented yttria-stabilized zirconia (YSZ) films with in-plane biaxial texture have been deposited on Si(111) substrates by ion beam assisted deposition at ambient temperature. The effects of ion/atom arrival rate ratio (R=(Ar+O+2)/ZrO2) and incident angle of bombarding ion beam on the film texture development were investigated. It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1.9, but it was degraded with the further increase of R. The optimal in-plane biaxial texture, whose full width at half maximum of the (111) ø-scan spectrum is 14°, can be obtained at R=1.9 and incident angle of 55°. For a fixed R, the optimal crystallinity and in-plane biaxial alignment of the YSZ films did not appear at the s,ame incident angle and showed an opposite variation with the change of the incident angle from 51°to 55°C-axis alignment (perpendicular to substrate surface) does not show any substantial variation with the change of incident angle within the range of 47°– 56°.
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| Keywords:
68.55.Jk
74.70.Ad
81.15.Cd
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Published: 01 March 2000
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