Effect of Si/Sil-yCy/Si Barriers on the Characteristics of Sil-xGex/Si Resonant Tunneling Structures

Chin. Phys. Lett.

2000, Vol. 17

Issue (11): 844-846 DOI:

Original Articles

Effect of Si/Si_l-yC_y/Si Barriers on the Characteristics of Si_l-xGe_x/Si Resonant Tunneling Structures

HAN Ping;CHENG Xue-Mei

Department of Physics, Nanjing University, Nanjing 210093 Masao Sakuraba, Young-Cheon Jeong, Takashi Matsuura, Junichi Murota Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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HAN Ping, CHENG Xue-Mei 2000 Chin. Phys. Lett. 17 844-846

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Abstract P-type double barrier resonant tunneling diodes (RTD) with the single Si_0.6Ge_0.4 quantum well and double Si_0.6Ge_0.4spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si_1-yC_y layer on the characteristics of the devices was shown by comparing the current-voltage (I-V) characteristics of RTD’s of the barriers of Si layers with that of Si/ Si_1-yC_y/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/ Si_1-yC_y/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/ Si_1-yC_y/Si barriers. The possible mechanism for the observed I- V characteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si_1-yC_y layers in the Si/Si_1-yC_y/Si barriers.

Keywords: 81.05.Hd 81.15.Gh 85.30.Mn

Published: 01 November 2000

PACS:	81.05.Hd	(Other semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I11/0844

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