Chin. Phys. Lett.  2000, Vol. 17 Issue (11): 841-843    DOI:
Original Articles |
Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra
WANG Zhu;WANG Shao-Jie;CHEN Zhi-Quan
Department of Physics, Wuhan University, Wuhan 430072
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WANG Zhu, WANG Shao-Jie, CHEN Zhi-Quan 2000 Chin. Phys. Lett. 17 841-843
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Abstract Positron lifetime spectra were measured for the Zn-doped p-type GaAs. In comparing the horizontal-Bridgman-method-grown and the floating-zone-method grown p- type GaAs with the liquid-encapsulation-Czochralski-grown p-type GaAs samples, positron trapping into vacancy type defects was observed in the former two grown p-type GaAs. Shallow positron traps were detected, and the dominant ones were attributed to acceptor the in p-type GaAs.
Keywords: 78.70.Bj     
Published: 01 November 2000
PACS:  78.70.Bj (Positron annihilation)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2000/V17/I11/0841
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