Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

Chin. Phys. Lett.

2000, Vol. 17

Issue (11): 827-828 DOI:

Original Articles

Au/Ti/p-Diamond Ohmic Contacts Prepared by Radio-Frequency Sputtering

ZHEN Cong-Mian;LIU Xue-Qin;YAN Zhi-Jun;GONG Heng-Xiang;WANG Yin-Yue

Department of Physics, Lanzhou University, Lanzhou 730000

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ZHEN Cong-Mian, LIU Xue-Qin, YAN Zhi-Jun et al 2000 Chin. Phys. Lett. 17 827-828

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Abstract The as-deposited Au/Ti/p-diamond contacts prepared by rf sputtering are ohmic. The ohmic characteristics of the contacts are improved after annealing. As for the as-deposited and annealed contacts, the specific contact resistivities of 2.886 x 10^-3 and 2.040 x 10^-4 Ω.cm² are obtained, respectively. The x-ray photoelectron spectroscopy analysis indicates that the titanium carbide formation occurs at the interface between titanium and the diamond substrate in the as-deposited state, and no TiO₂ is observed.

Keywords: 73.40.Ns 73.40.Cg 68.48.+f

Published: 01 November 2000

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	73.40.Cg	(Contact resistance, contact potential)
	68.48.+f

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I11/0827

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	ZHEN Cong-Mian
	LIU Xue-Qin
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	WANG Yin-Yue

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