| Original Articles |
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C-Axis Current -Voltage Characteristics of Mesa Structures on Bi2Sr2CaCu2O8+δ Single Crystals Fabricated by a Simple Technique Without Photolithography |
| FENG Yi-jun1;SHAN Wen-lei1;YOU Li-Xing1;ZHOU Gan-dong1;JI Zheng-ming1;KANG Lin1;XU Wei-wei1;YANG Sen-zu1;WU Pei-heng1;ZHANG Yu-heng2 |
| 1Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Structure Research Laboratory, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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FENG Yi-jun, SHAN Wen-lei, YOU Li-Xing et al 1999 Chin. Phys. Lett. 16 686-688 |
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Abstract A simple technique is reported for fabricating the mesa structure on Bi2Sr2CaCu2O8+δ single crystal. In the patterning process, metal masks are used instead of photolithography and argon ion milling is applied to form the small mesa on the Bi2Sr2CaCu2O8+δ crystal surface. Real four-probe transport measurements are made on the mesa structure and typical c-axis current-voltage (I - V) characteristics of the intrinsic Josephson effect have been observed. The superconducting gap parameter can be extracted from the multi-branch structure in the I - V characteristics. Additionally, from the strong hysteresis in the I - V characteristics, the capacitance CJ of the unit intrinsic Josephson junction has been estimated to be 2.3pF, which is in good agreement with that evaluated from the geometric parameters of the unit junction between the two copper oxide layers.
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| Keywords:
74.50.+r
74.72.Hs
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Published: 01 September 1999
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