Growth, Defects and Electrooptic Properties of RbTiOAsO<suB>4</suB> Crystal

Chin. Phys. Lett.

1999, Vol. 16

Issue (9): 672-674 DOI:

Original Articles

Growth, Defects and Electrooptic Properties of RbTiOAsO₄ Crystal

WANG Ji-yang;WEI Jing-qian;YIN Xin;HU Xiao-bo;CUI Wei-hong;GUAN Qing-cai;LIU Yao-gang

State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100

Cite this article:

WANG Ji-yang, WEI Jing-qian, YIN Xin et al 1999 Chin. Phys. Lett. 16 672-674

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Abstract RbTiOAsO₄(RTA) crystals of high optical quality were grown with flux method. The defects of RTA crystals are mainly growth striations, growth sector boundaries and sometimes ferroelectric domains. The refractive indices and electrooptic coefficients were measured together with dielectric constants, ionic conductivity and direct current resistivities. It is shown that RbTiOAsO₄ is not only as good a nonlinear optical crystal as KTiOPO₄ but also a superior electrooptic crystal.

Keywords: 61.72.-y 78.20.-e 81.10.Aj

Published: 01 September 1999

PACS:	61.72.-y	(Defects and impurities in crystals; microstructure)
	78.20.-e	(Optical properties of bulk materials and thin films)
	81.10.Aj	(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I9/0672

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	WANG Ji-yang
	WEI Jing-qian
	YIN Xin
	HU Xiao-bo
	CUI Wei-hong
	GUAN Qing-cai
	LIU Yao-gang

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