Chin. Phys. Lett.  1999, Vol. 16 Issue (8): 586-588    DOI:
Original Articles |
Interaction Between Dopants and Native Defects in Zn Doped p-InP Observed by Positron Annihilation
CHEN Zhi-quan;WANG Zhu;WANG Shao-jie
Department of Physics, Wuhan University, Wuhan 430072
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CHEN Zhi-quan, WANG Zhu, WANG Shao-jie 1999 Chin. Phys. Lett. 16 586-588
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Abstract Positron lifetime spectra were measured for three Zn doped p-InP samples as a function of temperature. Interaction of Zn dopants and native P vacancies was observed under thermal activation. It is found that the formation of Zn-Vp complex has a correlation with the carrier concentration. The formation mechanism of the complex was tentatively discussed.
Keywords: 61.72.Ji      78.70.Bj      71.55.Eq     
Published: 01 August 1999
PACS:  61.72.Ji  
  78.70.Bj (Positron annihilation)  
  71.55.Eq (III-V semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I8/0586
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