| Original Articles |
|
|
|
|
Quantum Well Controller |
| XUE Fang-shi |
| National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Nanjing Electronic Devices Institute, Nanjing 210016 (mailing address)
|
|
| Cite this article: |
|
XUE Fang-shi 1999 Chin. Phys. Lett. 16 535-537 |
|
|
|
|
Abstract A quantum well controller (QWC) consisting of a direct-gap/indirect-gap quantum well and a doping interface is proposed to control the dynamic operation of the Gunn active layer. Through the Monte Carlo simulation a new relaxation mode for this new device is found. The oscillation and amplification behavior of the Gunn active layer under the control of the QWC is investigated theoretically and experimentally. All work demonstrates the great control capacity of the QWC and provides a new way to improve the performance of semiconductor devices. A new oscillation diode made of the QWC and a Gunn active layer has been designed and fabricated. In the 8mm band the highest pulse output power of these diodes is 2.55 Wand the highest conversion efficiency is 18%.
|
| Keywords:
73.20.Dx
|
|
|
Published: 01 July 1999
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
