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Binding Energy of Excitons Bound to Neutral Donors in Two-Dimensional Semiconductors |
| LIU Jian-jun1,2;LI Yu-xian1,2;KONG Xiao-jun1,2;LI Shu-shen1 |
| 1National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, Hebei Normal University, Shijiazhuang 050016
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| Cite this article: |
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LIU Jian-jun, LI Yu-xian, KONG Xiao-jun et al 1999 Chin. Phys. Lett. 16 526-528 |
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Abstract The binding energies of excitons bound to neutral donors in two-dimensional (2D) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a varia-tional method for a relevant range of the effective electron-to-hole mass ratio σ. The ratio of the binding energy of a 2D exciton bound to a neutral donor to that of a 2D neutral donor is found to be from 0.58 to 0.10. In the limit of vanishing σ and large σ, the results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
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71.35.+z
73.20.Dx
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Published: 01 July 1999
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