Chin. Phys. Lett.  1999, Vol. 16 Issue (5): 370-372    DOI:
Original Articles |
Growth of Ni Films Observed by Scanning Tunneling Microscopy and X-ray
WANG De-liang1,2;U. Geyer2
1National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 2I. Physikalisches Institut der Universitaet Goettingen, Bunsenstrasse 9, D-37073 Goettingen, Germany
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WANG De-liang, U. Geyer 1999 Chin. Phys. Lett. 16 370-372
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Abstract Scanning tunneling microscopy was used to measure the mean lateral dimensions D of grains at the surface of Ni films with thicknesses ranging from 15 to 200nm. The same films were analyzed by x-ray diffraction to obtain the average linear dimensions δ of coherent scattering regions in the direction normal to the film plane (coherence depths). For thin Ni films condensed on single sapphire substrate at room temperature, these two lengths D and δ are equal and increase with film thickness. But for films thicker than 130nm, these two lengths have different constant values and D > δ. This is because the coherent scattering depth is not only limited by the grain sizes but also by various defects in the grains. The difference between the constant values of D and δ disappears for films after annealing for 30min at 423K in the ultra-high vacuum system.

Keywords: 68.55.-a      61.10.Eq      61.18.-j     
Published: 01 May 1999
PACS:  68.55.-a (Thin film structure and morphology)  
  61.10.Eq  
  61.18.-j  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I5/0370
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