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Buried CoSi2 Layers in Silicon on Insulator Formed by Wafer Bonding |
| ZHU Shi-yang;HUANG Yi-ping;RU Guo-ping |
| Department of Electronic Engineering, Fudan University, Shanghai 200433 |
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| Cite this article: |
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ZHU Shi-yang, HUANG Yi-ping, RU Guo-ping 1999 Chin. Phys. Lett. 16 282-284 |
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Abstract A novel single-crystalline Si/poly-CoSi2/SiO2/Sub-Si structure has been successfully formed by silicon wafer bonding technique. The surface energy of the as-bonded wafers at room temperature is about 70erg/cm2. Annealing at 800°C for 30min does not only strengthen the bond to about 1100erg/cm2, but also employs solid phase reaction of sputtered cobalt to form a buried poly-crystalline CoSi2 layer with a resistivity of approximately 160μΩ.cm. Two bond processes has been compared. The quality of the sputtered Si-SiO2 bonding is better than that of the sputtered Si-Si bonding.
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| Keywords:
73.40.Ty
73.40.Vz
73.30.+y
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Published: 01 April 1999
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| PACS: |
73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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73.40.Vz
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(Semiconductor-metal-semiconductor structures)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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