Chin. Phys. Lett.  1999, Vol. 16 Issue (3): 208-210    DOI:
Original Articles |
Growth and Morphology of β–FeSi2 Single Crystal with Chemical Vapor Transport
ZHAO Jian-hua1,2;LI Yan-chun2;LIU Ri-ping2;ZHANG Xiang-yi1;ZHOU Zhen-hua1;WANG Chao-ying1;XU Ying-fan1;WANG Wen-kui1,2
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080 2Institute of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004
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ZHAO Jian-hua, LI Yan-chun, LIU Ri-ping et al  1999 Chin. Phys. Lett. 16 208-210
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Abstract Single crystals of β–FeSi2 have been grown from vapor by employing chemical vapor transport technique and using iodine as transport agent in a closed ampoule. In the experiment, β–FeSi2 single crystals with well-developed faces and edges have been observed on the silicon substrate, but no needlelike ones have been found. The changes in the size and the geometric shape of the growth ampoule and temperature gradient are primary factors which result in the variation on β–FeSi2 single crystal morphology.
Keywords: 75.50.Bb      81.10.Bk      52.75.Rx     
Published: 01 March 1999
PACS:  75.50.Bb (Fe and its alloys)  
  81.10.Bk (Growth from vapor)  
  52.75.Rx  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I3/0208
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ZHAO Jian-hua
LI Yan-chun
LIU Ri-ping
ZHANG Xiang-yi
ZHOU Zhen-hua
WANG Chao-ying
XU Ying-fan
WANG Wen-kui
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