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Cubic Boron Nitride Films with Low Stress |
| ZHAO Yong-nian1,2;ZOU Guang-tian1;HE Zhi1;ZHU Pin-wen1;WANG Xue-jin1;ZHAO Bing2
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| 1State Key Laboratory for Superhard Materials,
2Key Laboratory for Supramolecular Structure and Spectroscopy, Jilin University, Changchun 130023 |
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| Cite this article: |
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ZHAO Yong-nian, ZOU Guang-tian, HE Zhi et al 1999 Chin. Phys. Lett. 16 155-156 |
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Abstract We report a cubic boron nitride (c-BN) film with low stress. Infrared (IR) peak position of c-BN at 1006.3cm-1measured by IR spectroscopy shows that the c-BN film has very low internal stress which leads to an excellent adhesion. Transmission electron microscope micrograph indicates the only BN phase on the surface of the film is c-BN phase. It is clearly seen from IR spectra that the intermediate layer between the substrate and the c-BN layer is of the molecular crystal explosion boron nitride, hexagonal boron nitride, and wurtzic boron nitride.
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| Keywords:
81.15.Jj
81.15.Np
52.80.Vp
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Published: 01 February 1999
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| PACS: |
81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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81.15.Np
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(Solid phase epitaxy; growth from solid phases)
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52.80.Vp
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(Discharge in vacuum)
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