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Electron-Spectroscopy Study of Amorphous CN:Ti Films |
| CAO Ze-xian1;GUO Jian-dong1;WANG En-ge1;LIU Feng-qin2 |
| 1State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of High Energy Physics, Chinese Academy of Sciences, Beijing |
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| Cite this article: |
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CAO Ze-xian, GUO Jian-dong, WANG En-ge et al 1999 Chin. Phys. Lett. 16 928-930 |
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Abstract Amorphous CN:Ti films deposited by using the reactive magnetron sputtering method were annealed in vacuum under 200 to 600°C. Incorporation of Ti (less than 3at.%) has brought some new perspectives to the material. Electron-energy-loss spectrum indicates improved conductivity in CN:Ti films as in the insulating CN films. The high-resolution core-level x-ray photoelectron spectroscopy (XPS) studies show that most carbon atoms form homeopolar bonding in as-deposited CN:Ti film. While the N Is line always shrinks with increasing annealing temperature, the total full width at half maximum of C Is line decreases only at annealing temperature over 300°C when the broadening due to heterobonding formation is outdone by the effect of increasing order. An enhanced π-band feature in the valence-XPS spectra at high annealing temperatures confirms the graphitization tendency of this material.
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| Keywords:
82.80.Pv
73.20.At
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Published: 01 December 1999
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| PACS: |
82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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73.20.At
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(Surface states, band structure, electron density of states)
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