Chin. Phys. Lett.  1999, Vol. 16 Issue (12): 922-924    DOI:
Original Articles |
Characteristics of the Organic Single-Quantum-Well Devices Fabricated by the Doping Method
HUANG Jing-song;XIE Zhi-yuan;YANG Kai-xia;LI Chuan-nan;ZHAO Yi;LIU Shi-yong
National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023
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HUANG Jing-song, XIE Zhi-yuan, YANG Kai-xia et al  1999 Chin. Phys. Lett. 16 922-924
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Abstract A doping technique to fabricate an organic quantum-well electroluminescent device is demonstrated. The fabricated single-quantum-well device consists of the following structure: an N,N’-Bis(3-methyphenyl)-N,N’-diphenyl benzidine layer for hole transportation, an 8- (quino1inoJate)-aluminum (AJq) layer for electron transportation and a light emitting layer of Alq doped with 5,6,11,12-tetraphenylnaphthacene(rubrene). The dopant rubrene serves as a potential well, whereas the undoped Alq layer serves as a barrier layer. The efficiency and luminance of the device have been significantly improved. The observed phenomena of the spectral narrowing and the emission peak energy blue-shift are a result of the recombination of carriers from the quantized energy states.
Keywords: 78.60.Fi      78.66.Qn      85.60.Jb     
Published: 01 December 1999
PACS:  78.60.Fi (Electroluminescence)  
  78.66.Qn (Polymers; organic compounds)  
  85.60.Jb (Light-emitting devices)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I12/0922
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HUANG Jing-song
XIE Zhi-yuan
YANG Kai-xia
LI Chuan-nan
ZHAO Yi
LIU Shi-yong
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