Asymmetrical Spin-Polarized Tunneling in a Composed-Barrier Magnetic Tunnel Junctions Under the Forward and Reverse Biases

Chin. Phys. Lett.

1999, Vol. 16

Issue (12): 919-921 DOI:

Original Articles

Asymmetrical Spin-Polarized Tunneling in a Composed-Barrier Magnetic Tunnel Junctions Under the Forward and Reverse Biases

XU Hui-ying¹;YU Wen-xue¹;KANG Jian²;MAI Zhen-hong¹

¹Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080 ²Department of Physics, Peking University, Beijing 100871

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XU Hui-ying, YU Wen-xue, KANG Jian et al 1999 Chin. Phys. Lett. 16 919-921

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Abstract Based on the two-band model and nearly-free-electron approximation, the tunnel current, conductance and mag-netoresistance of the composed-barrier magnetic tunnel junctions ( MTJ ) under the forward and reverse biases are discussed, respectively, and the numerical results are compared with the experimental results of the single-barrier MTJ . We find that there exists an asymmetrical spin-polarized tunneling in this structure under the forward and reverse biases. It suggests that this type of MTJ will provide novel functions to the potential applications of traditional types of MTJ.

Keywords: 73.40.Gk 73.23 Hk 72.15.Gd

Published: 01 December 1999

PACS:	73.40.Gk	(Tunneling)
	73.23 Hk
	72.15.Gd	(Galvanomagnetic and other magnetotransport effects)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I12/0919

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