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Effect of Substrate Temperature on Carbon Nitride Thin Films Prepared by Radio Frequency Sputtering |
| YANG Bing-chu1,2;N. Tajima3;T. Sogoh3;O. Takai3;CHEN Zhen-hua2 |
| 1Department of Applied Physics, 2Institute of Non-equilibrium Materials Science and Engineering, Central-South University of Technology, Changsha 410083
3Department of Materials Processing Engineering, Nagoya University, Nagoya 464-8603, Japan
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| Cite this article: |
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YANG Bing-chu, N. Tajima, T. Sogoh et al 1999 Chin. Phys. Lett. 16 847-849 |
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Abstract Carbon nitride thin films have been deposited by radio frequency sputtering at different substrate temperatures. The electronic structure and optical properties of the films have been systematically studied for the different substrate temperatures. The maximum N concentration in the films arrived at 41 at.%. The binding energy of core levels C 1s and N 1s produces a large shift in the range of 3.5-0.3eV depending on substrate temperature Ts. The band gap is at about 0.61-1.22eV. N atom concentration and shift of core level as well as electron band gap decrease with increasing Ts, which illustrates that raising Ts is not a good way to form carbon nitride films. Ultraviolet-visible near infrared spectra show that the films have a good transparency in near infrared region, but there is a sharp absorption peak around 2720 nm. The peak disappears when Ts is higher than 400°C.
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| Keywords:
81.15.Cd
78.65.Pi
73.20.Dx
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Published: 01 November 1999
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