Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs

Chin. Phys. Lett.

1999, Vol. 16

Issue (10): 758-760 DOI:

Original Articles

Ultrafast Heavy Hole-Phonon Scattering in Highly n-Doped GaAs

LIN Wei-zhu;HUANG Chun;ZHANG Hai-chao;WEN Jin-hui;GUO Bing;LAI Tian-shu

State Key Laboratory of Ultrafast Laser Spectroscopy, Department of Physics Zhongshan University, Guangzhou 510275

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LIN Wei-zhu, HUANG Chun, ZHANG Hai-chao et al 1999 Chin. Phys. Lett. 16 758-760

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Abstract Ultrafast heavy hole-phonon interactions in highly n-doped GaAs have been selectively studied with femtosecond absorption saturation measurements by tuning the pump-probe photon energy just above the doped electron Fermi edge. A heavy hole-phonon scattering time of ~ 300fs has been measured, which is consistent with that calculated by a numerical model. Accordingly, an optical deformation potential of about 31 eV has been estimated for this highly n-doped sample.

Keywords: 78.47.+p 78.55.Et

Published: 01 October 1999

PACS:	78.47.+p
	78.55.Et	(II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I10/0758

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	HUANG Chun
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	LAI Tian-shu

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