| Original Articles |
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Growth and Characterization of High Quality Sil-x-yGexCy Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition |
| QI Zhen;HUANG Jing-yun;YE Zhi-zhen;LU Huan-ming;CHEN Wei-hua;ZHAO Bing-hui;WANG Lei |
| State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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QI Zhen, HUANG Jing-yun, YE Zhi-zhen et al 1999 Chin. Phys. Lett. 16 750-752 |
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Abstract High quality Sil-x-yGexCy alloy with 2.2% C is grown at a relatively high temperature (760°C) on Si(100) using ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. The samples are investigated with high resolution cross-sectional transmission electron microscope and x-ray diffraction. Compared with Sil-x-yGex alloys, Sil-x-yGexCy alloys with small amounts of C have much less strain and larger critical layer thickness. The quality of interface is also improved. Relatively flat growing profiles of the film are confirmed by secondary ion mass spectroscopy. Fourier transform infrared spectroscopy is also used to testify that the carbon atoms are on the substitutional sites. It is proved that the UHV/CVD system is an efficient method of growing Sil-x-yGexCy alloys.
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| Keywords:
68.55.Jk
81.05.Hd
73.40.Lq
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Published: 01 October 1999
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| PACS: |
68.55.Jk
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81.05.Hd
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(Other semiconductors)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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