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Experimental Study of InP-Based InAlAs/InGaAs Quantum Well Infrared Photodetectors Operating at the 3-5 μm Wavelength Region |
| ZHANG Yong-gang;LI Ai-zhen;CHEN Jian-xin;YANG Quan-kui;REN Yao-cheng
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| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHANG Yong-gang, LI Ai-zhen, CHEN Jian-xin et al 1999 Chin. Phys. Lett. 16 747-749 |
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Abstract Gas source molecular beam epitaxy grown InP-based InAlAs/InGaAs quantum well infrared photodetectors operating at 3-5μm atmosphere window have been fabricated; their structural, electrical and optical characteristics have been investigated. The detectors show peak response wavelength λp at 3.85μm, with spectral width Δλ/λp of 4.6% and 7.2% at 1 and 5V bias voltages, respectively. Very low dark current of the detectors has been observed. At 2V bias the dark current is below 1nA at 77K and remains low value of 10nA at 150K. The background limited infrared performance temperature TBLIP as high as 165 K has been measured.
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| Keywords:
68.55.Bd
73.20.Dx
78.30.Fs
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Published: 01 October 1999
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