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Femtosecond Time-Resolved Exciton Recombination Dynamics in ZnO Microcrystallite Thin Films at Room Temperature |
| ZHANG Wei-li1;CHAI Lu2;XING Qi-rong1;WANG Qing-yue1;K. S . Wong3;Ping Yu3;H. Wang3;Z. K. Tang3;G. K. L;Wong3 |
| 1Ultrafast Laser Laboratory, School of Precision Instruments & Optoelectronics Engineering, and Optoelectronic Information Science and Technology Laboratory,
2 School of Science, Tianjin University, Tianjin 300072
3Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, KowJoon, Hong Kong
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| Cite this article: |
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ZHANG Wei-li, CHAI Lu, XING Qi-rong et al 1999 Chin. Phys. Lett. 16 728-730 |
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Abstract We report the femtosecond time-resolved studies of room temperature exciton recombination and ultrafast stimulated emission dynamics in ZnO microcrystallite thin films. A free exciton photoluminescence lifetime of few tens of picoseconds and a decay time of a few picoseconds for the stimulated emission were observed. The relatively slow rise time (3ps) for the P band as the result of exciton-exciton scattering compared with the 0.8 ps rise time for the N band attributed to electron-hole plasma recombination clearly distinguished the two stimulated emission processes.
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| Keywords:
42.65.Re
42.65.Hw
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Published: 01 October 1999
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| PACS: |
42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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42.65.Hw
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(Phase conjugation; photorefractive and Kerr effects)
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