Chin. Phys. Lett.  1999, Vol. 16 Issue (1): 62-64    DOI:
Original Articles |
Magnetoresistance in Magnetic Tunnel Junctions with Nonmagnetic Metallic Spacers and Cap Layers
ZHANG Wu-shou;LI Bo-zang
Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
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ZHANG Wu-shou, LI Bo-zang 1999 Chin. Phys. Lett. 16 62-64
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Abstract In a free-electron approximation, transport properties of magnetic tunnel junctions with nonmagnetic metallic spacers and cap layers were studied. The magnetoresistance is oscillatory functions of the thicknesses of non-magnetic metallic spacers and ferromagnets, their period is determined by the Fermi surface properties of the metals, and magnetoresistances (up to about 103%) much greater than those predicted by the Julliere's model are obtained. The results indicate that this structure has potential in designing spin-polarized tunneling devices.
Keywords: 75.70.Ak      75.70.Pa      85.30.Kk     
Published: 01 January 1999
PACS:  75.70.Ak (Magnetic properties of monolayers and thin films)  
  75.70.Pa  
  85.30.Kk (Junction diodes)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I1/062
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