| Original Articles |
|
|
|
|
A New Interface Anisotropic Potential of Zinc-Blende Semiconductor Interface Induced by Lattice Mismatch
|
| CHEN Yong-hai1;WANG Zhan-guo1;YANG Zhi-yu2 |
| 1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Department of Physics, the Hong Kong University of Science and Technology, Kowloon, Hong Kong
|
|
| Cite this article: |
|
CHEN Yong-hai, WANG Zhan-guo, YANG Zhi-yu 1999 Chin. Phys. Lett. 16 56-58 |
|
|
|
Abstract A new interface anisotropic potential, which is proportional to the lattice mismatch of interfaces and has no fitting parameter, has been deduced for (001) zinc-blende semiconductor interfaces. The comparison with other interface models is given for GaAs/AlAs and GaAs/InAs interfaces. The strong influence of the interface anisotropic potential on the inplane optical anisotropy of GaAs/AlGaAs low dimensional structures is demonstrated theoretically within the envelope function approximation.
|
| Keywords:
73.40.Kp
78.66.-w
|
|
|
Published: 01 January 1999
|
|
| PACS: |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
78.66.-w
|
(Optical properties of specific thin films)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
