Chin. Phys. Lett.  1999, Vol. 16 Issue (1): 50-52    DOI:
Original Articles |
Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures
YANG Quan-kui;LI Ai-zhen;CHEN Jian-xin
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
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YANG Quan-kui, LI Ai-zhen, CHEN Jian-xin 1999 Chin. Phys. Lett. 16 50-52
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Abstract Ga0.51In0.49P/(In)GaAs/GaAs heterostructure is regarded as an excellent candidate for two dimensional hole gas system as it has a large valence band offset ratio. In this paper, we report the hole mobility in GaInP/GaAs and GaInP/ In0.20G0.80As/GaAs p-type modulation doped heterostructures grown by gas source molecular beam epitaxy with different p-channels and doping methods. The influences of Be:GaAs cap layer, δ-doping, and strained InGaAs p-channel on hole mobility are discussed, and qualitatively explained by the ionized impurity scattering mechanism. Finally, it was shown that the improvement of hole mobility could be achieved by the δ-doping method combined with strained InGaAs channel.

Keywords: 72.20.Er      72.80.Ey     
Published: 01 January 1999
PACS:  72.20.Er  
  72.80.Ey (III-V and II-VI semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1999/V16/I1/050
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