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Evidence of the Precipitates in the V-Shaped Defects of Undoped GaN |
| KANG Jun-yong1;HUANG Qi-sheng1;OGAWA Tomoya2 |
| 1Department of Physics, Xiamen University, Xiamen 361005
2Department of Physics, Gakushuin University, Mejiro, Tokyo 171, Japan
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| Cite this article: |
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KANG Jun-yong, HUANG Qi-sheng, OGAWA Tomoya 1999 Chin. Phys. Lett. 16 47-49 |
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Abstract Precipitates in undoped GaN epilayers with specular surfaces grown on sapphire substrates were imaged by super high-resolution electron microscopy (HREM) and analyzed by energy-dispersive x-ray spectrometry (EDXS). The HREM images of the precipitates appeared more or less hexagonal intersection with several ten-nanometer large, which is the same as that of the V-shape defects. The EDXS spectra of the precipitates were mainly composed of the characteristic x-rays of oxygen, carbon, and gallium elements. The results suggest that the precipitates nucleate at the pinholes of the V-shape cavities and grow as the GaN growth.
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| Keywords:
68.55.Ln
81.70.Jb
32.30.Rj
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Published: 01 January 1999
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| PACS: |
68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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81.70.Jb
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(Chemical composition analysis, chemical depth and dopant profiling)
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32.30.Rj
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(X-ray spectra)
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