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Optical and Electric and Structural Properties of Til-xAIxN Thin Films |
| LI Zuo-yi;XIONG Rui;YANG Xiao-fei;HU Zuo-qi;XU Ying;LIN Geng-qi;LU Zhi-hong1 |
| Department of Solid State Electronics, Huazhong University of Science and Technology, Wuhan 430074
1Shanghai Institute of Metallugy, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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LI Zuo-yi, XIONG Rui, YANG Xiao-fei et al 1998 Chin. Phys. Lett. 15 533-534 |
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Abstract A sequence of Til-xAIxN films has been prepared by rf reactive magnetron sputtering. The optical and electric properties versus aluminum content x have been studied. Values suitable for magneto-optic protective layers have been achieved in Til-xAIx N thin films with aluminum content x > 0.75. X-ray diffraction results show that Til-xAIx N thin films in this study are a bcc structure up to x = 0.75, further increase in the aluminum content gives a wurtzite structure. All of the results show that the optical and electric properties of Til-xAIx N films might be related to the crystal structure.
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| Keywords:
75.70.-i
78.20.Ls
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Published: 01 July 1998
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| PACS: |
75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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78.20.Ls
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(Magneto-optical effects)
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