Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs

Chin. Phys. Lett.

1998, Vol. 15

Issue (7): 519-521 DOI:

Original Articles

Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs

GONG Qian;WU Ju;XU Bo;LIANG Ji-ben;FAN Ti-wen;WANG Zhan-guo;BAI Yuan-qiang¹

Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ¹Department of Materials, Beijing University of Science and Technology, Beijing 100083

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GONG Qian, WU Ju, XU Bo et al 1998 Chin. Phys. Lett. 15 519-521

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Abstract A 10-InAs-island-layer vertically coupled quantum dot structure on (001) GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy. The result shows that the vertically aligned InAs islands are asymmetrical along the two < 110 > directions on the (001) growth plane. Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the III-V compound semiconductors.

Keywords: 68.55.Bd 61.16.Bg

Published: 01 July 1998

PACS:	68.55.Bd
	61.16.Bg

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I7/0519

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	BAI Yuan-qiang

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