Chin. Phys. Lett.  1998, Vol. 15 Issue (5): 370-372    DOI:
Original Articles |
Perimeter Effects on Heavy Doping GaAs Diodes
SHI Xiao-zhong;WANG Le;XIA Guan-qun
Department of Semiconductor Materials and Devices, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Cite this article:   
SHI Xiao-zhong, WANG Le, XIA Guan-qun 1998 Chin. Phys. Lett. 15 370-372
Download: PDF(188KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The influence of perimeter effects on dark I-V characteristics of GaAs diode is investigated experimentally. The results indicate that the diodes with high energy states density will be more easily shorted than that with low energy states density during alloying. The possibility of shunt short of GaAs diode increases with the decrease of the distance between the front contact and pn junction. The AlGaAs layers enhance the dark current.
Keywords: 73.40.Kp     
Published: 01 May 1998
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1998/V15/I5/0370
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
SHI Xiao-zhong
WANG Le
XIA Guan-qun
Related articles from Frontiers Journals
[1] LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan. Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 370-372
[2] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 370-372
[3] WANG Yong, **, YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(5): 370-372
[4] ZHOU Bin, WANG Jin-Yan**, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN . A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator[J]. Chin. Phys. Lett., 2011, 28(10): 370-372
[5] CAO Dong-Sheng, LU Hai, **, CHEN Dun-Jun, HAN Ping, ZHANG Rong, ZHENG You-Dou . A 1100+V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination[J]. Chin. Phys. Lett., 2011, 28(1): 370-372
[6] GUO Yan, LIU Xiang-Lin, SONG Hua-Ping, YANG An-Li, ZHENG Gao-Lin, WEI Hong-Yuan, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2010, 27(6): 370-372
[7] LIU Hong-Gang, JIN Zhi, SU Yong-Bo, WANG Xian-Tai, CHANG Hu-Dong, ZHOU Lei, LIU Xin-Yu, WU De-Xin. Extrinsic Base Surface Passivation in High Speed “Type-II'” GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure[J]. Chin. Phys. Lett., 2010, 27(5): 370-372
[8] ZHU Bin, HAN Qin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, NIU Zhi-Chuan, WANG Xin, WANG Xiu-Ping, WANG Jie. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs[J]. Chin. Phys. Lett., 2010, 27(3): 370-372
[9] JI Hai-Ming, YANG Tao, CAO Yu-Lian, XU Peng-Fei, GU Yong-Xian, MA Wen-Quan, WANG Zhan-Guo. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2010, 27(2): 370-372
[10] DENG Hui-Yong**, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning***. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. Chin. Phys. Lett., 2010, 27(11): 370-372
[11] GE Ji, JIN Zhi, SU Yong-Bo, CHENG Wei, WANG Xian-Tai, CHEN Gao-Peng, LIU Xin-Yu. A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect[J]. Chin. Phys. Lett., 2009, 26(7): 370-372
[12] GUO Lun-Chun, WANG Xiao-Liang, XIAO Hong-Ling, RAN Jun-Xue, Wang Cui-Mei, MA Zhi-Yong, LUO Wei-Jun, WANG Zhan-Guo. Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure[J]. Chin. Phys. Lett., 2009, 26(1): 370-372
[13] LIU Yong-Hui, WANG Xue-Feng, LI Shu-Shen. Quantum-Confined Stark Effects in a Single GaN Quantum Dot[J]. Chin. Phys. Lett., 2008, 25(7): 370-372
[14] TIAN Zhao-Bing, GU Yi, WANG Kai, ZHANG Yong-Gang. Gas Source MBE-Grown Metamorphic InGaAs Photodetectors using InAlAsBuffer and Cap Layers with Cut-off Wavelength up to 2.7[J]. Chin. Phys. Lett., 2008, 25(6): 370-372
[15] SHANG Li-Yan, YU Guo-Lin, LIN Tie, ZHOU Wen-Zheng, GUO Shao-Ling, DAI Ning, CHU Jun-Hao. Spin Splitting in In0.53Ga0.47As/InP Heterostructures[J]. Chin. Phys. Lett., 2008, 25(6): 370-372
Viewed
Full text


Abstract