Chin. Phys. Lett.  1998, Vol. 15 Issue (4): 307-309    DOI:
Original Articles |
Effect of Solvents on the Absorption Properties of GaP Nanocrystals
CUI De-liang;GAO Shan-min;HUANG Bai-biao;YU Shu-qin;QIN Xiao-yan;JIANG Min-hua
National Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100
Cite this article:   
CUI De-liang, GAO Shan-min, HUANG Bai-biao et al  1998 Chin. Phys. Lett. 15 307-309
Download: PDF(368KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract GaP nanocrystals were synthesized by both the organic solvent reflux and high temperature high pressure benzene thermal synthesis methods. The effect of organic solvent on the optical absorption properties of GaP nanocrystals were studied. The results show that crystal grains of the sample synthesized by the latter method have better quality and uniformity. The solvents which consist of polar molecules and form strong chemical bonds with Ga atoms cause obvious redshift of the absorption spectra of GaP nanocrystals. The absorption spectra redshift much more if the solvent molecules have π electrons which involved in the formation of complex bond between Ga atoms and solvent molecules.
Keywords: 81.05.Ys      81.05.Ea      78.40.-q     
Published: 01 April 1998
PACS:  81.05.Ys  
  81.05.Ea (III-V semiconductors)  
  78.40.-q (Absorption and reflection spectra: visible and ultraviolet)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1998/V15/I4/0307
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
CUI De-liang
GAO Shan-min
HUANG Bai-biao
YU Shu-qin
QIN Xiao-yan
JIANG Min-hua
Related articles from Frontiers Journals
[1] PANG Li-Long, WANG Zhi-Guang, YAO Cun-Feng, ZANG Hang, LI Yuan-Fei, SUN Jian-Rong, SHEN Tie-Long, WEI Kong-Fang, ZHU Ya-Bin, SHENG Yan-Bin, CUI Ming-Huan, JIN Yun-Fan. The Structural Modification of LiTaO3 Crystal Induced by 100-keV H-ion Implantation[J]. Chin. Phys. Lett., 2012, 29(6): 307-309
[2] CHE Lu, DING Yan-Jun, PENG Zhi-Min. The Influences of Temperature, Concentration and Pressure Uncertainties on the Measurement Results of Wavelength Modulation Spectroscopy[J]. Chin. Phys. Lett., 2012, 29(6): 307-309
[3] WANG Guo-Biao, XIONG Huan, LIN You-Xi, FANG Zhi-Lai, KANG Jun-Yong, DUAN Yu, SHEN Wen-Zhong. Green Emission from a Strain-Modulated InGaN Active Layer[J]. Chin. Phys. Lett., 2012, 29(6): 307-309
[4] CHENG Feng-Feng , FA Tao, WANG Xin-Qiang, YAO Shu-De. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling[J]. Chin. Phys. Lett., 2012, 29(2): 307-309
[5] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 307-309
[6] SONG Shi-Wei, LIANG Hong-Wei**, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates[J]. Chin. Phys. Lett., 2012, 29(1): 307-309
[7] ZHOU Yan, WANG Hai-Long**, MA Chuan-He, GONG Qian, FENG Song-Lin . Fabrication of Hinged Mirrors Using a Strain-Driven Self-Assembly Method on a GaAs Substrate[J]. Chin. Phys. Lett., 2011, 28(7): 307-309
[8] PAN Jian-Hai, WANG Xin-Qiang**, CHEN Guang, LIU Shi-Tao, FENG Li, XU Fu-Jun, TANG Ning, SHEN Bo*** . Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2011, 28(6): 307-309
[9] WU Meng, **, ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. Chin. Phys. Lett., 2011, 28(6): 307-309
[10] CHEN Hai-Yang, JIANG Lan**, LI Da-Rang . Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction[J]. Chin. Phys. Lett., 2011, 28(5): 307-309
[11] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 307-309
[12] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng** . Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT[J]. Chin. Phys. Lett., 2011, 28(4): 307-309
[13] LI Li-Gong, LIU Shu-Man**, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo . Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(11): 307-309
[14] WANG Jia-Xing, WANG Lai**, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED[J]. Chin. Phys. Lett., 2011, 28(11): 307-309
[15] LIU Jian-Qi, , QIU Yong-Xin, WANG Jian-Feng, XU Ke**, YANG Hui . Analysis of Modified Williamson-Hall Plots on GaN Layers[J]. Chin. Phys. Lett., 2011, 28(1): 307-309
Viewed
Full text


Abstract