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Investigation of Preparing Cubic Boron Nitride Films by Magnetron Arc-Discharge Plasma Ion Plating |
| ZHAO Yong-nian1,2;HE Zhi1;WANG Bo1,TAO Yan-chun2;ZOU Guang-tian1
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| 1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
2Key Laboratory for Supramolecular Structure and Spectroscopy, Jilin University, Changchun 130023
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| Cite this article: |
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ZHAO Yong-nian, HE Zhi, WANG Bo et al 1998 Chin. Phys. Lett. 15 230-231 |
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Abstract A method of synthesizing cubic boron nitride (c-BN) films by the magnetron arc-discharge plasma ion plating was investigated. A nearly pure c-BN film was obtained by reacting boron vapor with high-density nitrogen ions, and using hot cathode arc-discharge plasma in a parallel magnetic field around the substrate. The structure of the films obtained was characterized by using infrared absorption spectroscopy and x-ray diffraction analysis. After numerous experiments, the phase pattern of the bias vs the current in synthesizing c-BN was found.
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| Keywords:
81.15.Jj
81.15.Np
52.80.Vp
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Published: 01 March 1998
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| PACS: |
81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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81.15.Np
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(Solid phase epitaxy; growth from solid phases)
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52.80.Vp
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(Discharge in vacuum)
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