Chin. Phys. Lett.  1998, Vol. 15 Issue (11): 819-821    DOI:
Original Articles |
Heteroepitaxial Growth of Single-Crystalline Diamond Film
WANG Qi-min;CHEN Qing-gui;SHI Ri-hua;DONG Rong-kang;NI Ru-shan;ZHU Ji-qian
State Key Laboratory of Transducer Technology, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
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WANG Qi-min, CHEN Qing-gui, SHI Ri-hua et al  1998 Chin. Phys. Lett. 15 819-821
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Abstract Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction. High temperature, low alcohol concentration, slow gas flow velocity, long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.
Keywords: 68.55.Jk      68.55.Ce      81.15.Gh     
Published: 01 November 1998
PACS:  68.55.Jk  
  68.55.Ce  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1998/V15/I11/0819
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WANG Qi-min
CHEN Qing-gui
SHI Ri-hua
DONG Rong-kang
NI Ru-shan
ZHU Ji-qian
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