Thermal Stress Analysis of Floating-Gate Tunneling Oxide Electrically Erasable Programmable Read Only Memory During Manufacturing Process

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 767-769 DOI:

Original Articles

Thermal Stress Analysis of Floating-Gate Tunneling Oxide Electrically Erasable Programmable Read Only Memory During Manufacturing Process

ZONG Xiang-fu¹;WANG Xu¹;WENG Yu-min¹;YAN Ren-jin¹;TANG Guo-an²;ZHANG Zhao-qiang¹

¹Institute of Materials Science, ²Department of Mechanics, Fudan University, Shanghai 200433

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ZONG Xiang-fu, WANG Xu, WENG Yu-min et al 1998 Chin. Phys. Lett. 15 767-769

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Abstract In this study, finite element modeling was used to evaluate the residual thermal stress in floating-gate tunneling oxide electrically erasable programmable read only memory (FLOTOX E²PROMs) manufacturing process. Special attention is paid to the tunnel oxide region, in which high field electron injection is the basis to E²PROMs operation. Calculated results show the presence of large stresses and stress gradients at the fringe: This may contribute to the invalidation of E²PROMs. A possible failure mechanism of E²PROM related to residual thermal stress-induced leakage is proposed.

Keywords: 81.40.Lm 62.20.Fe 61.20.Ja

Published: 01 October 1998

PACS:	81.40.Lm	(Deformation, plasticity, and creep)
	62.20.Fe
	61.20.Ja	(Computer simulation of liquid structure)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0767

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	ZONG Xiang-fu
	WANG Xu
	WENG Yu-min
	YAN Ren-jin
	TANG Guo-an
	ZHANG Zhao-qiang

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