Epitaxial Pb ( Zr0.52Ti0.48) O3/Y1Ba2Cu3O7-x Heterostructure Prepared by Pulsed Laser Deposition

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 764-766 DOI:

Original Articles

Epitaxial Pb ( Zr_0.52Ti_0.48) O₃/Y₁Ba₂Cu₃O_7-x Heterostructure Prepared by Pulsed Laser Deposition

HUANG Bi-ping;ZHENG Li-rong;GAO Jian-xia;WANG Lian-wei;HUANG Ji-po;LIN Cheng-lu

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050

Cite this article:

HUANG Bi-ping, ZHENG Li-rong, GAO Jian-xia et al 1998 Chin. Phys. Lett. 15 764-766

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Abstract C-axis oriented Y₁Ba₂Cu₃O_7-x(YBCO) thin films and PbZr_0.52Ti_0.48O₃(PZT)/(YBCO) heterostructures were deposited on single-crystal LaAIO₃ by Nd:YAG pulsed laser deposition. The results showed that the YBCO films exhibited superconducting transition temperature above 86 K and ion beam channeling minimum yields x_min of 49%, indicating the relatively good quality of YBCO films deposited on the LaAIO₃ substrate. The PZT films in situ grown on the YBCO films were epitaxially c-axis oriented with a saturation polarization and remanence as high as 57μC/cm² and 39μC/cm² (at 204 kV/cm), respectively. The coercive field of PZT films is about 55 kV/cm.

Keywords: 81.15.Fg 77.55.+f 74.76.Bz

Published: 01 October 1998

PACS:	81.15.Fg	(Pulsed laser ablation deposition)
	77.55.+f
	74.76.Bz

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0764

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	HUANG Bi-ping
	ZHENG Li-rong
	GAO Jian-xia
	WANG Lian-wei
	HUANG Ji-po
	LIN Cheng-lu

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