Chin. Phys. Lett.  1998, Vol. 15 Issue (10): 756-757    DOI:
Original Articles |
Photoluminescence Quenching of Porous Silicon by Molecule Adsorption
LI Xue-ping;YIN Feng;ZHANG Zhen-zong;XIAO Xu-rui
Institute of Photographic Chemistry, Chinese Academy of Sciences, Beijing 100101
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LI Xue-ping, YIN Feng, ZHANG Zhen-zong et al  1998 Chin. Phys. Lett. 15 756-757
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Abstract The photoluminescence of HNO3 chemically oxidized porous silicon can be easily quenched by organic adsorbates, and the ability of quenching was quantitatively estimated by two models- Langmuir adsorption isotherm and Stern-Volmer. A strong steric effect of organic adsorbates on the photoluminescence quenching of oxidized porous silicon was observed.
Keywords: 78.55.-m      78.50.Ge      68.10.Jy     
Published: 01 October 1998
PACS:  78.55.-m (Photoluminescence, properties and materials)  
  78.50.Ge  
  68.10.Jy  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1998/V15/I10/0756
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