Chin. Phys. Lett.  1997, Vol. 14 Issue (9): 682-685    DOI:
Original Articles |
Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films
HAN Wei-qiang1,2;HAN Gao-rong1;FAN Shou-shan2;GU Bing-lin2
1Department of Materials, Zhejiang University, Hangzhou 310027 2Department of Physics, Tsinghua University, Beijing 100084
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HAN Wei-qiang, HAN Gao-rong, FAN Shou-shan et al  1997 Chin. Phys. Lett. 14 682-685
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Abstract Hydrogenated nanocrystalline silicon nitrogen (nc-SiNx:H) films were prepared by rf glow discharge of gas mixture of silane (SiH4) and nitrogen (N2) diluted heavily by hydrogen (H2). The effect of the gas volume ratios Xg of (SiU4 +N2)/H2 and XN) of N2/SiH4 on the crystallization and composition of films is described. The growth process and crystallization mechanism of nc-SiNx:H films are discussed in detail.
Keywords: 61.16.-d      81.15.Gh     
Published: 01 September 1997
PACS:  61.16.-d  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I9/0682
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HAN Wei-qiang
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