Luminescence from Si/SiO<suB>2</suB> with Si Implantation

Chin. Phys. Lett.

1997, Vol. 14

Issue (7): 549-552 DOI:

Original Articles

Luminescence from Si/SiO₂ with Si Implantation

LAN Ai-dong;LIU Bai-xin;BAI Xin-de

Department of Materials Science and Engineering, Tsinghua Univemity, Beijing 100084

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LAN Ai-dong, LIU Bai-xin, BAI Xin-de 1997 Chin. Phys. Lett. 14 549-552

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Abstract Silicon single crystals with a SiO₂ overlayer of various thicknesses ( 1000-6000Å ) were implanted by 120 and 160keV Si-ions to doses in a range of (0.5-1.0)x10¹⁷cm^-2 to study the visible light emission in their as-implanted and post-annealed states. An emission band peaked around 2.0eV was visible in the photoluminescence (PL) spectra of all the as-implanted samples. After post-annealing at 1100°C in a flowing N₂ gas, it was found that a visible band peaked in the range of 1.7eV is detectable from all the samples and that the PL intensity exihibits a correlation with the oxygen concentration in the implanted region. Possible mechanisms responsible for the observed light emission were also discussed.

Keywords: 78.55.Hx 61.72.Ww

Published: 01 July 1997

PACS:	78.55.Hx	(Other solid inorganic materials)
	61.72.Ww

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I7/0549

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	LAN Ai-dong
	LIU Bai-xin
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