Chin. Phys. Lett.  1997, Vol. 14 Issue (3): 221-224    DOI:
Original Articles |
Oxidation State of Cu and Superconductivity in Bilayer T1-Based Cuprates
CHEN Xiao-jia;XU Zhu-an;JIAO Zheng-kuan;ZHANG Qi-rui
Department of Physics, Zhejiang University, Hangzhou 310027
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CHEN Xiao-jia, XU Zhu-an, JIAO Zheng-kuan et al  1997 Chin. Phys. Lett. 14 221-224
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Abstract The oxidation state of Cu in the homologous Tl2Ba2Can-1CunO2n+4+δ(n = 1 - 4) series has been analyzed in terms of the bond valence sums. It is found that the totally mobile hole concentration nH,t of the type-I CuO2 planes at the optimal level increases with increasing number of CuO2 layers per unit cell from 1 to 3, and the largest nH,t is observed to be 0.474 when n = 3, which just corresponds to the highest Tc in the bilayer T1-based materials, and then it decreases with the increase of n. It is indicated that the correlation between the maximum value of Tc and n is similar to that between nH,t and n.
Keywords: 74.72.Fq      72.20.Jv     
Published: 01 March 1997
PACS:  74.72.Fq  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I3/0221
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CHEN Xiao-jia
XU Zhu-an
JIAO Zheng-kuan
ZHANG Qi-rui
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