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Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix |
| Y.H.Chen;Z.Yang;XU Bo1;WANG Zhan-guo1;LIANG Ji-ben1 |
| Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
1Laboratory of Semiconductor Materials Science, lnstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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Y.H.Chen, Z.Yang, XU Bo et al 1997 Chin. Phys. Lett. 14 932-935 |
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Abstract In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.
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| Keywords:
73.20.Dx
71.35.+z
78.55.Cr
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Published: 01 December 1997
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