Chin. Phys. Lett.  1997, Vol. 14 Issue (10): 772-774    DOI:
Original Articles |
Influence of Boron Dopant on Switching Behaviour of Polycrystalline Diamond Thin Films
WANG Xiao-ping;WANG Li-jun;XU Yue-e1;SHEN Shu-po1
Department of Applied Science, Zhengzhou Institute of Aeronautical Industrial Management, Zhengzhou 450052 1Institute of Physics Engineering, Zhengzhou University, Zhengzhou 450052
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WANG Xiao-ping, WANG Li-jun, XU Yue-e et al  1997 Chin. Phys. Lett. 14 772-774
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Abstract Switching behaviour of polycrystalline diamond thin films is reported. Boron-doped diamond thin films were deposited by microwave plasma-assisted chemical vapor deposition on silicon substrate. Dependence of switching behaviour on boron impurity has been investigated. The threshold voltage obviously decreases with increasing content of boron dopant.
Keywords: 68.55.Gi      85.60.Jb      81.15.Gh     
Published: 01 October 1997
PACS:  68.55.Gi  
  85.60.Jb (Light-emitting devices)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1997/V14/I10/0772
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WANG Xiao-ping
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